AlGaN/GaN HEMTs with an InGaN-based back-barrier

Abstract

In this work, we use an ultra-thin InGaN layer below the GaN channel to increase the confinement of the electrons. In this novel approach, the polarization induced electric field in the InGaN layer is used to raise the conduction band energy in the buffer layer with respect to the channel. With this technique, a double-heterojunction transistor can be formed without the need of a high bandgap or p-doped buffer. Poisson-Schrodinger simulations (Wu, et.al.) have confirmed the increased electron confinement at electron temperatures as high as 3000 K