J. Huang, E. Glass, J. Abrokwah, B. Bernhardt, M. Majerus, E. Spears, J. Parsey, D. Scheitlin, R. Droopad, L. Mills, K. Hawthorne, J. Blaugh
{"title":"Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications","authors":"J. Huang, E. Glass, J. Abrokwah, B. Bernhardt, M. Majerus, E. Spears, J. Parsey, D. Scheitlin, R. Droopad, L. Mills, K. Hawthorne, J. Blaugh","doi":"10.1109/GAAS.1997.628236","DOIUrl":null,"url":null,"abstract":"This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.
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