{"title":"Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides","authors":"Shuxia Li, N. G. Tarr, W. Ye, P. Berini","doi":"10.1109/GROUP4.2015.7305975","DOIUrl":null,"url":null,"abstract":"Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10<sup>-8</sup> Acm<sup>-2</sup> at 1 volt reverse bias.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10-8 Acm-2 at 1 volt reverse bias.
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