Carrier lifetime assessment in integrated Ge waveguide devices

S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout
{"title":"Carrier lifetime assessment in integrated Ge waveguide devices","authors":"S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout","doi":"10.1109/GROUP4.2015.7305916","DOIUrl":null,"url":null,"abstract":"Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 μm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2×10<sup>19</sup>cm<sup>-3</sup>.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 μm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2×1019cm-3.
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集成Ge波导器件的载波寿命评估
利用时间分辨泵浦-探针光谱法推导出硅基锗波导中的载流子寿命。对于1 μm宽的Ge波导,当载流子密度约为2×1019cm-3时,其寿命估计为1.6 ns。
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