Thermal effect aware X-bit filling technique for peak temperature reduction during VLSI testing

Sanjoy Mitra, Debaprasad Das
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Abstract

Power density for digital circuits is increasing by leaps and bounds with the progress of technology and increased integration. Higher spatial power density contemplates heat generation which raises peak temperature affecting flawless system behavior. The situation is worsened further during testing and this rise in temperature during test can permanently spoil the chip. To resolve this problem, significant efforts are rendered by the academia and industry for controlling temperature rise during test mode operation and peak temperature reduction is viewed as a sub problem in this context. Controlling of temperature divergence is also needed to bring temperature distribution homogeneity across the chip. Heat generated inside a chip under test can be dropped down by lowering inter test cube switching activity. Controlling of peak temperature and temperature divergence with in a safe legitimate threshold may be accomplished by an intelligent don't care bit filling approach which especially takes care of thermal effect and drops down switching activity inside a circuit block. In this paper, a thermal effect aware don't care (X) filling approach is put forwarded which controls peak temperature and temperature divergence within a predefined threshold during testing. This proposal is verified by extensive simulation on ITC'99 benchmark circuits and exhibits a satisfactory level of efficacy.
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基于热效应感知的x位填充技术降低超大规模集成电路测试中的峰值温度
随着技术的进步和集成度的提高,数字电路的功率密度正在突飞猛进地增长。更高的空间功率密度考虑热产生,提高峰值温度,影响完美的系统行为。在测试过程中,这种情况会进一步恶化,测试过程中温度的升高会永久损坏芯片。为了解决这一问题,学术界和工业界在控制试验模式运行期间的温升方面做了大量工作,峰值温度降低被视为其中的一个子问题。控制温度发散也需要使整个芯片的温度分布均匀。通过降低测试立方体间的开关活动,可以降低被测芯片内部产生的热量。峰值温度和温度散度控制在一个安全的合法阈值内,可以通过一种智能的不在意位填充方法来实现,这种方法特别考虑了热效应,降低了电路块内部的开关活动。本文提出了一种热效应感知的不关心(X)填充方法,该方法在测试过程中将峰值温度和温度发散控制在预定义的阈值内。在ITC’99基准电路上进行了大量的仿真,验证了该方案的有效性。
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