{"title":"Electronic properties of metal-molecular nanojunctions and networks","authors":"Po Zhang, C. Papadopoulos","doi":"10.1109/NMDC.2015.7439249","DOIUrl":null,"url":null,"abstract":"Electronics based on individual molecules is often considered the ultimate form of miniaturization for future \"beyond CMOS\" technologies and hybrid integrated circuits. In this work, we investigate nanoscale metal-molecular junctions and networks composed of interconnected molecules and metallic clusters. Molecular modeling via Austin Model 1 (AMI) semi-empirical methods is used to study the electronic properties of several classes of metal-molecular nanojunctions and networks, including linear chains and multi-terminal networks. The HOMO (highest occupied molecular orbital)-LUMO (lowest unoccupied molecular orbital) gaps of the molecular systems decrease by several eV after the introduction of Al clusters. Molecular orbitals near the HOMO-LUMO gap of benzenedithiol molecular networks show good delocalization whereas those composed of alkanedithiol molecules were mainly localized to the metallic clusters. In addition, it was found that the frontier orbital level spacing decreased as the size of the molecular networks increased, approaching band formation for the largest structures studied. The HOMO-LUMO gap was also found to decrease with increasing network size while both HOMO and LUMO level shifts for larger structures indicated a decreased barrier to electron transport. These results provide an avenue for engineering electronics at the molecular level by using superstructures of different molecules and topologies.","PeriodicalId":181412,"journal":{"name":"2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2015.7439249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Electronics based on individual molecules is often considered the ultimate form of miniaturization for future "beyond CMOS" technologies and hybrid integrated circuits. In this work, we investigate nanoscale metal-molecular junctions and networks composed of interconnected molecules and metallic clusters. Molecular modeling via Austin Model 1 (AMI) semi-empirical methods is used to study the electronic properties of several classes of metal-molecular nanojunctions and networks, including linear chains and multi-terminal networks. The HOMO (highest occupied molecular orbital)-LUMO (lowest unoccupied molecular orbital) gaps of the molecular systems decrease by several eV after the introduction of Al clusters. Molecular orbitals near the HOMO-LUMO gap of benzenedithiol molecular networks show good delocalization whereas those composed of alkanedithiol molecules were mainly localized to the metallic clusters. In addition, it was found that the frontier orbital level spacing decreased as the size of the molecular networks increased, approaching band formation for the largest structures studied. The HOMO-LUMO gap was also found to decrease with increasing network size while both HOMO and LUMO level shifts for larger structures indicated a decreased barrier to electron transport. These results provide an avenue for engineering electronics at the molecular level by using superstructures of different molecules and topologies.
基于单个分子的电子学通常被认为是未来“超越CMOS”技术和混合集成电路小型化的最终形式。在这项工作中,我们研究了由相互连接的分子和金属团簇组成的纳米级金属分子连接和网络。采用Austin Model 1 (AMI)半经验方法进行分子建模,研究了几种金属-分子纳米结和网络的电子性质,包括线性链和多端网络。引入Al团簇后,分子体系的HOMO -LUMO间隙减小了几个eV。苯二硫醇分子网络的HOMO-LUMO间隙附近的分子轨道具有良好的离域性,而由烷二硫醇分子组成的分子轨道主要定位于金属簇。此外,研究还发现,前沿轨道能级间距随着分子网络大小的增加而减小,对于所研究的最大结构,前沿轨道能级间距接近于能带形成。HOMO-LUMO间隙也随着网络大小的增加而减小,而较大结构的HOMO和LUMO能级的变化表明电子传递的势垒降低。这些结果为利用不同分子和拓扑结构的超结构在分子水平上进行工程电子学研究提供了一条途径。