A BIST method for TSVs pre-bond test

H. Zimouche, G. D. Natale, M. Flottes, B. Rouzeyre
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引用次数: 7

Abstract

In this paper we present a Built-In-Self-Test (BIST) method dedicated to pre-bond testing of TSVs in 3D stacked integrated circuits. The test method aims to detect full-open and pin-hole defects by measuring the discharge delay of TSVs' equivalent capacitance. The paper presents an original solution for monitoring the discharge delay of the TSV under test independently of the process variations. Simulation-based results shows that the method is robust w.r.t these variations. The proposed BIST circuitry is small enough to be inserted in the available area between the TSVs.
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一种用于tsv粘结前测试的BIST方法
本文提出了一种用于三维堆叠集成电路中tsv键合前测试的内置自检(BIST)方法。该测试方法旨在通过测量tsv等效电容的放电延迟来检测全开和针孔缺陷。本文提出了一种不受工艺变化影响的被测TSV放电延迟监测方法。仿真结果表明,该方法具有较强的鲁棒性。所提出的BIST电路足够小,可以插入tsv之间的可用区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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