S. Krause, R. Andersson, M. Bylund, V. Marknäs, A. Saleem, Elisa Passalaqua, Shafiq Kabir, V. Desmaris
{"title":"High-frequency electrical circuit model for integrated capacitors utilizing lossy nanostructures","authors":"S. Krause, R. Andersson, M. Bylund, V. Marknäs, A. Saleem, Elisa Passalaqua, Shafiq Kabir, V. Desmaris","doi":"10.1109/ECTC32696.2021.00197","DOIUrl":null,"url":null,"abstract":"A physics-based model is presented that captures the electrical high-frequency behavior of low-dimensional nanostructures used in emerging technologies such as the ultra-high-density capacitor. Derived from transmission line theory the analytical expression provides a frequency-dependent admittance of a lossy nanostructure, which can be numerically integrated over arbitrary areas comprising the nanostructure. Edge effects, a distributed nature of resistivity or dimensions of the nanostructure comprising the device can be taken into consideration and make it a powerful tool for designing future integrated circuits. The model predictions show an excellent match with hardware measurements up to 3 GHz on state-of-the-art carbon nanofiber based MIM-capacitors with capacitance densities up to 500 nF/mm2 at $\\mathrm{6}\\ \\mu \\mathrm{m}$ device height.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A physics-based model is presented that captures the electrical high-frequency behavior of low-dimensional nanostructures used in emerging technologies such as the ultra-high-density capacitor. Derived from transmission line theory the analytical expression provides a frequency-dependent admittance of a lossy nanostructure, which can be numerically integrated over arbitrary areas comprising the nanostructure. Edge effects, a distributed nature of resistivity or dimensions of the nanostructure comprising the device can be taken into consideration and make it a powerful tool for designing future integrated circuits. The model predictions show an excellent match with hardware measurements up to 3 GHz on state-of-the-art carbon nanofiber based MIM-capacitors with capacitance densities up to 500 nF/mm2 at $\mathrm{6}\ \mu \mathrm{m}$ device height.