F. Stellari, P. Song, J. Sylvestri, D. Miles, Orazio P. Forlenza, D. Forlenza
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引用次数: 4
Abstract
In this paper, a new emission-based method for measuring the amplitude of on-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, which are used as local probe points for the noise. In order to demonstrate the capabilities of this technique, we discuss the results obtained for two early microprocessor chips fabricated in 65 nm and 45 nm Silicon On Insulator (SOI) technologies.
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