R. Mills, G. Dunn, A. Walker, M. Daniels, P. Bishop, K. O. Jensen, B. Ridley, D. Herbert, J. Jefferson
{"title":"Monte Carlo simulation of wide AlGaAs barriers","authors":"R. Mills, G. Dunn, A. Walker, M. Daniels, P. Bishop, K. O. Jensen, B. Ridley, D. Herbert, J. Jefferson","doi":"10.1109/CORNEL.1993.303119","DOIUrl":null,"url":null,"abstract":"An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"250 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1/spl times/10/sup 18/ cm/sup -3/. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device.<>
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