{"title":"Monte Carlo simulations of carrier transport in high speed quantum well lasers","authors":"G. Crow, R. Abram","doi":"10.1109/EDMO.1995.493693","DOIUrl":null,"url":null,"abstract":"A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 /spl mu/m. The device consists of three unstrained 80 /spl Aring/ InGaAs wells bounded by 700 /spl Aring/ wide ungraded InGaAsP (1.25 /spl mu/m) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 /spl mu/m. The device consists of three unstrained 80 /spl Aring/ InGaAs wells bounded by 700 /spl Aring/ wide ungraded InGaAsP (1.25 /spl mu/m) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation.
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