Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493692
M. K. Haldar, F. Mendis, J. Wang
The ultimate limit of direct modulation bandwidth of a semiconductor laser diode is the intrinsic bandwidth determined by rate equations. In this paper we show that the intrinsic bandwidth can be significantly increased through the use of injection-locking. Our analysis shows that for moderate and high injection levels, the bandwidth of a laser diode can be increased to several times the bandwidth of a free running laser diode operating at the same bias current. The required injection power depends on laser parameters but is less than the power of the free running laser. However, the injected photon number and detuning must lie within the range of values required for the dynamic injection-locked state.
{"title":"New technique for increasing speed of semiconductor lasers","authors":"M. K. Haldar, F. Mendis, J. Wang","doi":"10.1109/EDMO.1995.493692","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493692","url":null,"abstract":"The ultimate limit of direct modulation bandwidth of a semiconductor laser diode is the intrinsic bandwidth determined by rate equations. In this paper we show that the intrinsic bandwidth can be significantly increased through the use of injection-locking. Our analysis shows that for moderate and high injection levels, the bandwidth of a laser diode can be increased to several times the bandwidth of a free running laser diode operating at the same bias current. The required injection power depends on laser parameters but is less than the power of the free running laser. However, the injected photon number and detuning must lie within the range of values required for the dynamic injection-locked state.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121806522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493705
I.A.D. Russell, P. Webb, R. G. Davis
This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.
{"title":"Transient electro-thermal modelling of AlGas/GaAs HBTs","authors":"I.A.D. Russell, P. Webb, R. G. Davis","doi":"10.1109/EDMO.1995.493705","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493705","url":null,"abstract":"This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122761361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493704
P. Livreri, M. Sannino
The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.
{"title":"Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications","authors":"P. Livreri, M. Sannino","doi":"10.1109/EDMO.1995.493704","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493704","url":null,"abstract":"The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493703
A. Di Paola, M. Sannino
Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper.
{"title":"Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set","authors":"A. Di Paola, M. Sannino","doi":"10.1109/EDMO.1995.493703","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493703","url":null,"abstract":"Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123559028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493714
M. Murphy, C.R. Rescod
The integrated optic interface reported in this paper is designed to provide the capability of wideband analogue channel and bidirectional digital signal distribution over a single optical fibre when operated with suitable equipment. The range of applications based on this technology could be for inter-equipment rack interconnection, cross site links or phased array antenna RF and control/receive data signal distribution. It is the latter application that is specifically reported in this paper and the integrated optic interface has been developed for a phased array antenna signal distribution network. The compact device is for mounting at the sub-array level or within the solid state transmit/receive (T/R) modules located at the array face and the size advantages offered by this optical technology are particularly relevant in this case. Phased array antennas may require typically 10 to many 1000s of T/R modules and the potential low cost and high performance of an optical interface is extremely attractive. In operation the integrated optic interface would route a microwave reference and control signal to the T/R module via an optical fibre splitter network. In the reverse direction the individual digitised receive channels are distributed back to the digital beam forming network for appropriate signal processing. The technology used for the manufacture of this integrated optic interface is silica-on-silicon based and the device developed has a number of optical and electronic functions. This includes WDM and thermo-optic tuning capability as well as digital and RF component integration. How these are incorporated into the integrated optic interface with a general description of the manufacturing details are reported in this paper.
{"title":"A silica-on-silicon integrated optic interface for microwave sub-systems","authors":"M. Murphy, C.R. Rescod","doi":"10.1109/EDMO.1995.493714","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493714","url":null,"abstract":"The integrated optic interface reported in this paper is designed to provide the capability of wideband analogue channel and bidirectional digital signal distribution over a single optical fibre when operated with suitable equipment. The range of applications based on this technology could be for inter-equipment rack interconnection, cross site links or phased array antenna RF and control/receive data signal distribution. It is the latter application that is specifically reported in this paper and the integrated optic interface has been developed for a phased array antenna signal distribution network. The compact device is for mounting at the sub-array level or within the solid state transmit/receive (T/R) modules located at the array face and the size advantages offered by this optical technology are particularly relevant in this case. Phased array antennas may require typically 10 to many 1000s of T/R modules and the potential low cost and high performance of an optical interface is extremely attractive. In operation the integrated optic interface would route a microwave reference and control signal to the T/R module via an optical fibre splitter network. In the reverse direction the individual digitised receive channels are distributed back to the digital beam forming network for appropriate signal processing. The technology used for the manufacture of this integrated optic interface is silica-on-silicon based and the device developed has a number of optical and electronic functions. This includes WDM and thermo-optic tuning capability as well as digital and RF component integration. How these are incorporated into the integrated optic interface with a general description of the manufacturing details are reported in this paper.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116814305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493699
Y. Aliyu, D. Morgan, H. Thomas, S. Bland
Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed.
{"title":"Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)","authors":"Y. Aliyu, D. Morgan, H. Thomas, S. Bland","doi":"10.1109/EDMO.1995.493699","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493699","url":null,"abstract":"Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127141645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493707
C. Gatzke, D. Schroeder
A device simulator that solves semiconductor models on a parallel computer system has been developed. We present our method for the numerical solution of time dependent semiconductor equations in up to three dimensions. The chosen discretisation in time is suitable for stiff problems where time constants spread over many orders of magnitude. The efficiency of the approach is demonstrated with some examples including the simulation of photodetectors.
{"title":"Transient three-dimensional device simulation with PARDESIM","authors":"C. Gatzke, D. Schroeder","doi":"10.1109/EDMO.1995.493707","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493707","url":null,"abstract":"A device simulator that solves semiconductor models on a parallel computer system has been developed. We present our method for the numerical solution of time dependent semiconductor equations in up to three dimensions. The chosen discretisation in time is suitable for stiff problems where time constants spread over many orders of magnitude. The efficiency of the approach is demonstrated with some examples including the simulation of photodetectors.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126666304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493697
M. J. Kelly, J. Stewart, A. Patterson
A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V/sub ce/ dependent function where the constants of the equation are made to vary with base current I/sub b/. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices.
{"title":"A large signal model for a GaInP/GaAs HBT","authors":"M. J. Kelly, J. Stewart, A. Patterson","doi":"10.1109/EDMO.1995.493697","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493697","url":null,"abstract":"A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V/sub ce/ dependent function where the constants of the equation are made to vary with base current I/sub b/. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121678752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493715
J. Liang, C. Aitchison
This paper proposes a novel configuration for broad bandwidth, high gain block by using cascaded single-stage distributed amplifier. Libra simulation shows that this configuration provides 11 dB more gain than the conventional distributed amplifier using the same active devices.
{"title":"A proposal of a broadband high gain block using cascaded single-stage distributed amplifiers","authors":"J. Liang, C. Aitchison","doi":"10.1109/EDMO.1995.493715","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493715","url":null,"abstract":"This paper proposes a novel configuration for broad bandwidth, high gain block by using cascaded single-stage distributed amplifier. Libra simulation shows that this configuration provides 11 dB more gain than the conventional distributed amplifier using the same active devices.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134166645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-27DOI: 10.1109/EDMO.1995.493696
S. Plimmer, J. David, T. Lee, G. Rees, P. Houston, P. Robson, R. Grey, D. Herbert, A. Higgs, D. Wight
Electron and hole multiplication characteristics have been measured on a series of GaAs p-i-n and n-i-p diodes in which the nominal i-region thicknesses, w, range from 1 /spl mu/m to 25 nm. Using the conventional analysis, where ionization is assumed to be uniform across the device, the effective electron and hole ionization coefficients (/spl alpha/ and /spl beta/ respectively) have been deduced. The results obtained from the w=1 /spl mu/m and 0.5 /spl mu/m structures agree with published data which was derived from thick devices. However, those observed in the thinner structures show device width dependence. By implementing semi-analytical techniques to solve Boltzmann's equation and to interpret these results, dead space effects are seen to reduce /spl alpha/ and /spl beta/ in short devices at low multiplication values but overshoot effects compensate when the electric field is increased.
{"title":"Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes","authors":"S. Plimmer, J. David, T. Lee, G. Rees, P. Houston, P. Robson, R. Grey, D. Herbert, A. Higgs, D. Wight","doi":"10.1109/EDMO.1995.493696","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493696","url":null,"abstract":"Electron and hole multiplication characteristics have been measured on a series of GaAs p-i-n and n-i-p diodes in which the nominal i-region thicknesses, w, range from 1 /spl mu/m to 25 nm. Using the conventional analysis, where ionization is assumed to be uniform across the device, the effective electron and hole ionization coefficients (/spl alpha/ and /spl beta/ respectively) have been deduced. The results obtained from the w=1 /spl mu/m and 0.5 /spl mu/m structures agree with published data which was derived from thick devices. However, those observed in the thinner structures show device width dependence. By implementing semi-analytical techniques to solve Boltzmann's equation and to interpret these results, dead space effects are seen to reduce /spl alpha/ and /spl beta/ in short devices at low multiplication values but overshoot effects compensate when the electric field is increased.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115344680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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