Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493696

S. Plimmer, J. David, T. Lee, G. Rees, P. Houston, P. Robson, R. Grey, D. Herbert, A. Higgs, D. Wight

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引用次数: 2

Abstract

Electron and hole multiplication characteristics have been measured on a series of GaAs p-i-n and n-i-p diodes in which the nominal i-region thicknesses, w, range from 1 /spl mu/m to 25 nm. Using the conventional analysis, where ionization is assumed to be uniform across the device, the effective electron and hole ionization coefficients (/spl alpha/ and /spl beta/ respectively) have been deduced. The results obtained from the w=1 /spl mu/m and 0.5 /spl mu/m structures agree with published data which was derived from thick devices. However, those observed in the thinner structures show device width dependence. By implementing semi-analytical techniques to solve Boltzmann's equation and to interpret these results, dead space effects are seen to reduce /spl alpha/ and /spl beta/ in short devices at low multiplication values but overshoot effects compensate when the electric field is increased.

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非局部效应对薄GaAs p-i-n和n-i-p二极管倍增特性的影响

测量了一系列GaAs p-i-n和n-i-p二极管的电子和空穴倍增特性，其中标称i区厚度w范围为1 /spl mu/m至25 nm。利用传统的分析，假设电离在整个装置上是均匀的，推导出有效电子和空穴电离系数(分别为/spl α /和/spl β /)。从w=1 /spl mu/m和0.5 /spl mu/m结构中得到的结果与已发表的厚器件数据一致。然而，在较薄的结构中观察到的那些显示出器件宽度依赖性。通过实施半解析技术来解决玻尔兹曼方程并解释这些结果，死区效应可以在低乘法值下降低短器件的/spl α /和/spl β /，但当电场增加时，超调效应会补偿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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