Lan Peng, Soon-Wook Kim, Mike Soules, M. Gabriel, M. Zoberbier, E. Sleeckx, H. Struyf, Andy Miller, E. Beyne
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引用次数: 14
Abstract
In this paper, we present advances in 300mm wafer-to-wafer (W2W) oxide-oxide bonding for high density 3D interconnect application. A CMOS compatible low temperature oxide-oxide bonding method has been developed which yields consistent void-free bonding. In addition, sub-micron W2W alignment accuracy has been demonstrated with standalone test materials using an integrated permanent bonding platform.
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