Characteristic evaluation of Ga-Sn-O thin film by Hall measurement

Abstract

We are researching Ga-Sn-O (GTO) thin film as a potential material for future semiconductor devices. In this study, we investigate the GTO thin film using Hall measurement. A GTO film is deposited using RF magnetron sputtering, and annealed using electric-furnace annealing in air at temperature of 350 °C. We utilize van der Pauw method of the Hall measurement with slight modification, where the Hall effect is defined as the difference with and without the magnetic field, which is a special operation to compensate a large asymmetrical characteristic of this thin film. It is found that by applying the magnetic field, the Hall voltage changes. Finally, we obtain that the carrier density is 8.4×1019cm and the carrier mobility is 1.4cm2V-1s-1.