A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, P. S. Zazulya, G. N. Kamaev
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引用次数: 0
Abstract
Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.
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