Design of a fully integrated colpitts oscillator operating at VDD below 4kT/q

M. B. Machado, M. C. Schneider, C. Galup-Montoro
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引用次数: 5

Abstract

This paper presents a fully integrated enhanced swing Colpitts oscillator that operates from supply voltages below 4kT/q. Design equations considering the oscillation frequency and start-up conditions required for operation of the Colpitts oscillator are derived. The oscillator was built with a zero-VT transistor, due to its high drive capability at low voltages. Measurement results obtained for a prototype integrated in the IBM 130 nm technology demonstrated the operation of the oscillator with 86 mV of supply voltage.
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工作在低于4kT/q的VDD下的全集成colpit振荡器的设计
本文介绍了一种完全集成的增强摆幅科尔皮茨振荡器,其工作电压低于4kT/q。推导了考虑科尔皮茨振荡器振荡频率和启动条件的设计方程。由于其在低电压下的高驱动能力,该振荡器采用零vt晶体管构建。集成了IBM 130纳米技术的样机的测量结果表明,该振荡器在86 mV电源电压下可以正常工作。
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