3D Heterogeneous Integration with 2D Materials

C. McClellan, C. Bailey, I. Datye, A. Gabourie, R. Grady, K. Schauble, S. Vaziri, E. Pop
{"title":"3D Heterogeneous Integration with 2D Materials","authors":"C. McClellan, C. Bailey, I. Datye, A. Gabourie, R. Grady, K. Schauble, S. Vaziri, E. Pop","doi":"10.23919/SNW.2019.8782932","DOIUrl":null,"url":null,"abstract":"As traditional device scaling slows down, three-dimensional (3D) integrated circuits (ICs) are needed to continue Moore’s Law advancements. We show that two-dimensional (2D) semiconductors are promising for heterogeneously integrated 3D ICs owing to their atomically thin nature and unique processing, thermal, and device capabilities.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

As traditional device scaling slows down, three-dimensional (3D) integrated circuits (ICs) are needed to continue Moore’s Law advancements. We show that two-dimensional (2D) semiconductors are promising for heterogeneously integrated 3D ICs owing to their atomically thin nature and unique processing, thermal, and device capabilities.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
3D异质集成与2D材料
随着传统设备规模的放缓,需要三维集成电路(ic)来继续摩尔定律的进步。我们表明,二维(2D)半导体由于其原子薄的性质和独特的加工、热和器件能力,在异质集成3D集成电路中很有前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge Effects on Semiconductor-Metal Phase Transition in Mono-layer MoTe2 Reduced RTN Amplitude and Single Trap induced Variation for Ferroelectric FinFET by Substrate Doping Optimization Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors Si Electron Nano-Aspirator towards Emerging Hydro-Electronics 3D Heterogeneous Integration with 2D Materials
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1