K. Obata, K. Sugioka, K. Toyoda, H. Takai, K. Midorikawa
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Abstract
It is shown that a combination of PLD and nitrogen radical beams can grow high quality TiN films on a Si substrate without silicidation at the interface. Analysis using X-ray photoelectron spectroscopy (XPS) revealed that this method achieves synthesis of stoichiometric TiN films.
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