M. Ariga, Y. Sekido, A. Sakai, T. Baba, A. Matsutani, F. Koyama, K. Iga
{"title":"Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching","authors":"M. Ariga, Y. Sekido, A. Sakai, T. Baba, A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/CLEOPR.1999.814783","DOIUrl":null,"url":null,"abstract":"We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.","PeriodicalId":408728,"journal":{"name":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","volume":"152 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.1999.814783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
