K. Endo, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara
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引用次数: 1
Abstract
We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).
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