Auger investigations of GaAs sputtered with low-energy Ar/sup +/ ions at glancing incidence

R. Kosiba, G. Ecke, J. Breza, J. Liday
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Abstract

Sputter induced effects due to the bombardment of GaAs with low energy Ar/sup +/ ions were investigated by means of AES. The ion energy varied between 0.3 and 5 keV, and the incidence angle was 80/spl deg/ with respect to the surface normal. Increasing As depletion in the surface region was observed with increasing argon ion energy. A shift of Auger peaks by 1 eV was defected for both As and Ga LMM Auger transitions with the increase of the argon energy. This shift is related to the lattice damage extension in the surface region due to argon bombardment.
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低能Ar/sup +/离子溅射GaAs的俄歇研究
利用原子发射光谱(AES)研究了低能Ar/sup +/离子轰击GaAs的溅射效应。离子能量在0.3 ~ 5kev之间变化,相对于表面法线的入射角为80/spl°。随着氩离子能量的增加,表面As损耗增加。随着氩能量的增加,As和Ga LMM俄歇跃迁的俄歇峰都发生了1 eV的位移。这种变化与氩轰击引起的表面晶格损伤扩展有关。
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