{"title":"Performance evaluation of dual-channel armchair graphene nanoribbon field-effect transistor","authors":"Adila Syaidatul Azman, Z. Johari, R. Ismail","doi":"10.1109/SMELEC.2014.6920815","DOIUrl":null,"url":null,"abstract":"Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dual-channel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage characteristic is then extracted and the performance of single and dual-channel AGNR FETs is compared. From the simulation, it is found that dual-channel AGNR FET exhibits significant improvement in ON current over two fold. Results obtained will give insight in the implementation of dual-channel AGNR FET for performance enhancement in future electronic devices.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2014.6920815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dual-channel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage characteristic is then extracted and the performance of single and dual-channel AGNR FETs is compared. From the simulation, it is found that dual-channel AGNR FET exhibits significant improvement in ON current over two fold. Results obtained will give insight in the implementation of dual-channel AGNR FET for performance enhancement in future electronic devices.
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