Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $\mathrm{A}1_{2}\mathrm{O}_{3}$ Gate Dielectrics
Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu
{"title":"Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $\\mathrm{A}1_{2}\\mathrm{O}_{3}$ Gate Dielectrics","authors":"Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu","doi":"10.1109/radecs47380.2019.9745651","DOIUrl":null,"url":null,"abstract":"MOS devices with $\\mathrm{A}1_{2}\\mathrm{O}_{3}$ dielectrics are irradiated sequentially using gamma rays and 1907 MeV tantalum ions, and the combined irradiation effects on the $\\mathrm{A}1_{2}\\mathrm{O}_{3}$ based MOS devices are investigated and the mechanism is analyzed.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
MOS devices with $\mathrm{A}1_{2}\mathrm{O}_{3}$ dielectrics are irradiated sequentially using gamma rays and 1907 MeV tantalum ions, and the combined irradiation effects on the $\mathrm{A}1_{2}\mathrm{O}_{3}$ based MOS devices are investigated and the mechanism is analyzed.
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