Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745692
Guodong Xiong, Zilun Qin, Huiping Zhu, Suling Zhao, Lei Wang, Bo Li, Xuewen Zhang, Z. Zheng, Jiantou Gao, Jianqun Yang, Xingji Li, Binhong Li, Yang Huang, Jiajun Luo, Zhengsheng Han, Xinyue Liu
Radiation effects on the electrical and optical properties of hybrid perovskite photodetectors (PDs) were evaluated. The photovoltaic conversion efficiency began to decrease when proton fluence reached 1×1013 p/cm/, An abnormal transient inverse pulse current in PDs came out due to the charging and discharging processes in PCBM layers with proton beam induced electron centers. An energy band model integrated with photon-generated carriers' dynamics was established to reveal its physical mechanism.
{"title":"Mechanism of transient inverse pulse current in hybrid perovskite photodetector induced by proton beam irradiation","authors":"Guodong Xiong, Zilun Qin, Huiping Zhu, Suling Zhao, Lei Wang, Bo Li, Xuewen Zhang, Z. Zheng, Jiantou Gao, Jianqun Yang, Xingji Li, Binhong Li, Yang Huang, Jiajun Luo, Zhengsheng Han, Xinyue Liu","doi":"10.1109/radecs47380.2019.9745692","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745692","url":null,"abstract":"Radiation effects on the electrical and optical properties of hybrid perovskite photodetectors (PDs) were evaluated. The photovoltaic conversion efficiency began to decrease when proton fluence reached 1×1013 p/cm/, An abnormal transient inverse pulse current in PDs came out due to the charging and discharging processes in PCBM layers with proton beam induced electron centers. An energy band model integrated with photon-generated carriers' dynamics was established to reveal its physical mechanism.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116072748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745697
A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestro, M. Guazzelli
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
{"title":"Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments","authors":"A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestro, M. Guazzelli","doi":"10.1109/radecs47380.2019.9745697","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745697","url":null,"abstract":"The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131970859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745731
V. Felitsyn, A. Bakerenkov, A. Zhukov, V. Butuzov, Y. Bocharov, V. Pershenkov, A. Rodin, V. Telets, V. Belyakov
Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.
{"title":"Radiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation","authors":"V. Felitsyn, A. Bakerenkov, A. Zhukov, V. Butuzov, Y. Bocharov, V. Pershenkov, A. Rodin, V. Telets, V. Belyakov","doi":"10.1109/radecs47380.2019.9745731","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745731","url":null,"abstract":"Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134099284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745716
B. Podlepetsky, V. Pershenkov, A. Bakerenkov, V. Felitsyn, A. Rodin
Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.
{"title":"Influence of temperature and electrical modes on radiation sensitivity and errors of RADFETs","authors":"B. Podlepetsky, V. Pershenkov, A. Bakerenkov, V. Felitsyn, A. Rodin","doi":"10.1109/radecs47380.2019.9745716","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745716","url":null,"abstract":"Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132871602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745710
N. Rostand, G. Hubert, S. Martinie
SET compact modeling for SEU prediction is faced to new challenges for advanced technological nodes. Some works have already addressed these challenges, proposing modeling approach for new relevant physical aspects like bipolar amplification, 3D charge deposit morphology, and bipolar amplification. Very recently, we have developed a fully compact SET model for very integrated technologies taking these effects into account, suitable for SPICE simulations. In this paper, we propose to couple this SET compact model with MUSCA SEP3 soft errors simulation plateform, in order to address soft error risk assessment for very integrated technologies. SBU/MCU predictions are performed in FDSOI based SRAM memories after TCAD calibration of our SET compact model. The purpose is to show how bipolar amplification, 3D charge deposit morphology, and SET/circuit coupling are able to influence simulated SBU/MCU cross sections values.
{"title":"SEU Prediction for Very Integrated Circuits based on Advanced Physical Considerations","authors":"N. Rostand, G. Hubert, S. Martinie","doi":"10.1109/radecs47380.2019.9745710","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745710","url":null,"abstract":"SET compact modeling for SEU prediction is faced to new challenges for advanced technological nodes. Some works have already addressed these challenges, proposing modeling approach for new relevant physical aspects like bipolar amplification, 3D charge deposit morphology, and bipolar amplification. Very recently, we have developed a fully compact SET model for very integrated technologies taking these effects into account, suitable for SPICE simulations. In this paper, we propose to couple this SET compact model with MUSCA SEP3 soft errors simulation plateform, in order to address soft error risk assessment for very integrated technologies. SBU/MCU predictions are performed in FDSOI based SRAM memories after TCAD calibration of our SET compact model. The purpose is to show how bipolar amplification, 3D charge deposit morphology, and SET/circuit coupling are able to influence simulated SBU/MCU cross sections values.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133458382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745715
D. Söderström, Lucas Matana Luza, A. Bosser, Thierry Gil, K. Voss, H. Kettunen, A. Javanainen, L. Dilillo
Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the memory from the irradiation were investigated. To study weakened but not fully stuck bits after irradiation, parameters such as the refresh frequency of the memories was varied. The effect on the number of stuck bits from reading and writing the memory was studied, as well as the effect from waiting a time span between writing and reading the memory. These parameters were found to matter in the observed number of errors in the memory. Data on the findings from the microbeam irradiation from tests with different test modes are presented in this paper regarding suck bits and bit upsets. The test modes include dynamic March test and data retention tests with only refresh operations during irradiation.
{"title":"Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam","authors":"D. Söderström, Lucas Matana Luza, A. Bosser, Thierry Gil, K. Voss, H. Kettunen, A. Javanainen, L. Dilillo","doi":"10.1109/radecs47380.2019.9745715","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745715","url":null,"abstract":"Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the memory from the irradiation were investigated. To study weakened but not fully stuck bits after irradiation, parameters such as the refresh frequency of the memories was varied. The effect on the number of stuck bits from reading and writing the memory was studied, as well as the effect from waiting a time span between writing and reading the memory. These parameters were found to matter in the observed number of errors in the memory. Data on the findings from the microbeam irradiation from tests with different test modes are presented in this paper regarding suck bits and bit upsets. The test modes include dynamic March test and data retention tests with only refresh operations during irradiation.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132764911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745642
R. Benacquista, P. Pourrouquet, A. Varotsou, R. Mangeret, Catherine Barillot, G. Santin, Hugh Evans
Ray-Tracing and Reverse Monte-Carlo are the two most widely used methods to estimate the dose at component level for space applications. The Ray-Tracing method is fast but presents intrinsic limitations while the Reverse Monte-Carlo method is more precise but more time consuming. In the frame of the ESA GTREFF project, a statistical comparison between these two methods has been performed, based on realistic satellite models for GEO orbit and using FASTRAD®. Results are presented and analyzed.
{"title":"Comparison of Ray-Tracing and Reverse Monte-Carlo Methods: Application to GEO orbit","authors":"R. Benacquista, P. Pourrouquet, A. Varotsou, R. Mangeret, Catherine Barillot, G. Santin, Hugh Evans","doi":"10.1109/radecs47380.2019.9745642","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745642","url":null,"abstract":"Ray-Tracing and Reverse Monte-Carlo are the two most widely used methods to estimate the dose at component level for space applications. The Ray-Tracing method is fast but presents intrinsic limitations while the Reverse Monte-Carlo method is more precise but more time consuming. In the frame of the ESA GTREFF project, a statistical comparison between these two methods has been performed, based on realistic satellite models for GEO orbit and using FASTRAD®. Results are presented and analyzed.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127838970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745647
{"title":"The 2019 RADECS Association - Yuri Gagarin Award","authors":"","doi":"10.1109/radecs47380.2019.9745647","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745647","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115889822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745655
Sébastien Thomet, S. De Paoli, Fakhreddine Ghaffari, F. Abouzeid, Olivier Romain, P. Roche
This paper presents an on-chip error classifier for Soft-Error Rate characterization of cells under radiations. Implemented on top of flip-flop chains, it counts Single-Event Upset and Single-Event Transient at mission profile.
{"title":"CLASS: on-Chip Lightweight Accurate SEU/SET event claSSifier","authors":"Sébastien Thomet, S. De Paoli, Fakhreddine Ghaffari, F. Abouzeid, Olivier Romain, P. Roche","doi":"10.1109/radecs47380.2019.9745655","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745655","url":null,"abstract":"This paper presents an on-chip error classifier for Soft-Error Rate characterization of cells under radiations. Implemented on top of flip-flop chains, it counts Single-Event Upset and Single-Event Transient at mission profile.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114400484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745690
Yu-Mi Kim, J. Jeong, Ga-Won Lee
In this study, we investigated the electrical and physical characteristics of ZnO TFTs with different active layer structures after high dose proton irradiation. After proton irradiation, the electrical performance of both ZnO TFTs was improved with increasing native point defects. For the ZnO nanorods TFTs, an anomalous hump phenomenon has disappeared, and the performance has dramatically improved compared to the ZnO film. From the results, it can be explained that the ZnO TFTs with nanostructure morphology are more sensitive to proton irradiation compared to the ZnO film.
{"title":"Proton Effect Test Compare to ZnO Thin-Film Transistors with Different Active Layer Structures","authors":"Yu-Mi Kim, J. Jeong, Ga-Won Lee","doi":"10.1109/radecs47380.2019.9745690","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745690","url":null,"abstract":"In this study, we investigated the electrical and physical characteristics of ZnO TFTs with different active layer structures after high dose proton irradiation. After proton irradiation, the electrical performance of both ZnO TFTs was improved with increasing native point defects. For the ZnO nanorods TFTs, an anomalous hump phenomenon has disappeared, and the performance has dramatically improved compared to the ZnO film. From the results, it can be explained that the ZnO TFTs with nanostructure morphology are more sensitive to proton irradiation compared to the ZnO film.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123537615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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