LADA methodologies to localize embedded memory failure

B. Yeoh, M.H. Thor, L.S. Gan, Y. Chan, S. Goh
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引用次数: 1

Abstract

Dynamic Laser Stimulation (DLS) techniques have met with great success to debug integrated circuit (IC) soft failure. Laser assisted device alteration (LADA) is one of the DLS technique well-established to tackle speed-path failure and analysis of defect-free performance limiting circuits. In this work, we discuss atypical LADA analysis to localize system-on-chip (SOC) memory manufacturing soft and hard defects.
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定位嵌入式内存故障的LADA方法
动态激光刺激(DLS)技术在集成电路软故障调试方面取得了巨大成功。激光辅助器件改造(Laser assisted device change, LADA)是一种成熟的DLS技术,用于解决速度路径故障和分析无缺陷性能限制电路。在这项工作中,我们讨论了非典型LADA分析来定位片上系统(SOC)存储器制造的软缺陷和硬缺陷。
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