Impact of Junction Capacitor and Transfer characteristic on EMI prediction

Wenxia Chen, Wenjie Chen, Pengfei Ren, Rui Cheng
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Abstract

While silicon carbide devices miniaturize power electronic devices, they bring more serious EMI problems. This paper proposes a switching model for noise source EMI spectral prediction, which is a key prerequisite for accurate prediction in terms of electronic magnetic interference (EMI). Compared with the asymmetric trapezoidal wave, the modeling of the step-by-step switch with oscillation stage can better reflect the switching characteristics. In addition, the junction capacitance and transfer characteristics have a certain influence on the rise time, fall time and oscillation of the switch, and also affect the noise spectra in different frequency bands. Considering the actual switching process, the effect of junction capacitance and transfer characteristics on the switching oscillation process and the EMI problem of its corresponding frequency band is studied.
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结电容和传输特性对电磁干扰预测的影响
碳化硅器件在使电力电子器件小型化的同时,也带来了更严重的电磁干扰问题。本文提出了一种用于噪声源电磁干扰频谱预测的开关模型,该模型是准确预测电磁干扰的关键前提。与非对称梯形波相比,带振荡阶跃开关模型能更好地反映开关特性。此外,结电容和转移特性对开关的上升时间、下降时间和振荡都有一定的影响,也会影响不同频段的噪声谱。结合实际开关过程,研究了结电容和转移特性对开关振荡过程的影响及其相应频段的电磁干扰问题。
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