Demonstration of Ni-free Surface Finishing with IGEPIG for Solid-State Diffusion Bonding on Ultra-fine Pitch Chip-on-Film (COF)

K. Pun, Jason Rotanson, Navdeep S. Dhaka, Chee-wah Cheung, A. Chan
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Abstract

This paper demonstrates the latest ultra-fine pitch scalability of off-chip IC assembly on an 18 $\mu {\mathrm{ m}}$ pitch chip-on-film (COF) package fabricated by novel fully additive process (FAP) with Ni-free surface finish plating, immersion Au/electroless Pd/immersion Au (IGEPIG). The COF assembled with Au-Au diffusion bonding method is evaluated in terms of electrical and mechanical performance. Comparison is made with various finishes including Electrolytic Ni/Au and electroless Ni/electroless Pd/immersion Au (ENEPIG). Excellent alignment with sufficient contact area is achieved even on such narrow traces. The substrate fabricated by FAP possess desirable trace profile suitable for fine pitch bonding. With different finishing, it is seen that surface roughness is the main contributing factor that interrupt diffusion and creep process in forming void on the joint interface while the elastic plastic properties of the material construction and tri-layer thickness affect the deformation of the interconnect structure. Correlations between the surface finish and the Au-Au solid state diffusion bonding on the COF is established. In terms of long term reliability, all finishes show stable contact resistance below 30 $\text{m}\omega $ with no open joint on the daisy chain connectivity after high temperature humidity storage at $85^{\circ }\text{C}$/85% RH (1000 hours) and air-to-air thermal shock test at $125^{\circ }\text{C}$/-$55^{\circ }\text{C}$ (1000 cycles).
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超细间距片上膜(COF)固态扩散键合中IGEPIG无ni表面处理的演示
本文展示了在18 $\mu {\mathrm{ m}}$螺距片上芯片(COF)封装上最新的超细间距可扩展性,该封装采用新颖的全增材工艺(FAP),无镍表面电镀,浸入式Au/化学镀Pd/浸入式Au (IGEPIG)。对用Au-Au扩散键合法组装的COF进行了电学性能和力学性能评价。比较了电解Ni/Au和化学Ni/化学Pd/浸金(ENEPIG)等各种表面处理方法。即使在如此狭窄的迹线上,也可以实现具有足够接触面积的出色对准。采用FAP工艺制备的基板具有良好的迹线轮廓,适合于细间距键合。在不同的整理工艺条件下,表面粗糙度是影响接头界面孔洞形成过程中扩散和蠕变过程中断的主要因素,而材料结构的弹塑性性能和三层厚度影响连接结构的变形。建立了COF表面光洁度与Au-Au固体扩散键合之间的关系。就长期可靠性而言,在$85^{\circ }\text{C}$ /85高温湿度储存后,所有饰面都显示出稳定的接触电阻低于30 $\text{m}\omega $,雏菊链连通性上没有开放接头% RH (1000 hours) and air-to-air thermal shock test at $125^{\circ }\text{C}$/-$55^{\circ }\text{C}$ (1000 cycles).
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