TEM based dislocation auto analysis flow of advanced logic devices

Abstract

Automatic flow of transmission electron microscopy (TEM)-based dislocation analysis on Source/Drain (S/D) and contact formation process is developed. Based on the previously developed model of dislocation stress, an automated methodology is implemented that allows fast and human-error-free extraction of dislocation core position and its impact on the device channel stress and the electrical performance. This approach enables us to analyze the impact of dislocations in S/D of advanced logic devices and to optimize structure and process conditions.