P. Fernandez-Martínez, L. Ré, D. Flores, S. Hidalgo, D. Quirion, M. Ullán
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引用次数: 1
Abstract
The IMB-CNM (Barcelona) has developed a new vertical JFET (V-JFET) technology with the purpose of working as rad-hard switches in the HV powering scheme of the upgraded ATLAS tracker. The design of the new transistors draws upon a deep-trenched 3D technology to achieve vertical conduction and low switch-off voltage. These features prospect suitable radiation hardness for the application. The first V-JFET prototypes are now fabricated and characterized, with very promising results already meeting the application requirements. A compilation of the simulated and measured performance is shown in the contribution. To evaluate the radiation hardness, gamma irradiation has been performed and the main results are presented here.
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