{"title":"A process scheme chosen for BiCMOS circuit","authors":"J. Bian, W. Lu","doi":"10.1109/HKEDM.1994.395141","DOIUrl":null,"url":null,"abstract":"Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"366 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers.<>
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