{"title":"Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques","authors":"Zeng Xu, P. Lai, W. Ng","doi":"10.1109/HKEDM.1994.395138","DOIUrl":null,"url":null,"abstract":"In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.<>
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