{"title":"Silicon wafer bonding techniques for assembly of micromechanical elements","authors":"A. Hanneborg","doi":"10.1109/MEMSYS.1991.114775","DOIUrl":null,"url":null,"abstract":"Different bonding techniques under development for assembly of micromechanical elements are reviewed. A versatile wafer-to-wafer bonding process using silicon-to-silicon anodic bonding with sputtered Pyrex 7740 borosilicate thin film has been developed. The method gives sealings with a bonding strength of approximately 2.5*10/sup 6/N/m/sup 2/ and excellent thermal matching, resulting in minimized thermally induced stress in micromechanical components. The anodic bonding is performed at temperatures well below the aluminum/silicon eutectic temperature, making the process suitable also for metallized wafers. The large electrostatic force obtained during bonding is crucial for a high-yield wafer-to-wafer bonding process. High bonding strength and complete bonding of 3-in wafers were obtained. This technique was used for a silicon pressure sensor application, giving excellent thermal and long term stability for this sensor. The results are supported by finite-element calculations.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1991.114775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
Different bonding techniques under development for assembly of micromechanical elements are reviewed. A versatile wafer-to-wafer bonding process using silicon-to-silicon anodic bonding with sputtered Pyrex 7740 borosilicate thin film has been developed. The method gives sealings with a bonding strength of approximately 2.5*10/sup 6/N/m/sup 2/ and excellent thermal matching, resulting in minimized thermally induced stress in micromechanical components. The anodic bonding is performed at temperatures well below the aluminum/silicon eutectic temperature, making the process suitable also for metallized wafers. The large electrostatic force obtained during bonding is crucial for a high-yield wafer-to-wafer bonding process. High bonding strength and complete bonding of 3-in wafers were obtained. This technique was used for a silicon pressure sensor application, giving excellent thermal and long term stability for this sensor. The results are supported by finite-element calculations.<>