Y. Huh, P. Bendix, Kyungjin Min, Jau-Wen Chen, R. Narayan, L. Johnson, S. Voldman
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引用次数: 6
Abstract
With MOSFET scaling, increased design complexity, and multiple system power domains, ESD failures occur in internal core areas which are not connected to external package pins. A review of the various internal core device failure mechanisms and design recommendations are presented.
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