{"title":"Fabrication and optimization of T -gate for high performance HEMT and MMIC devices","authors":"Aneesh M. Joseph","doi":"10.1109/ICEE56203.2022.10117759","DOIUrl":null,"url":null,"abstract":"The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10117759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.
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