V. Gritsenko, A. Shaposhnikov, Yu. N. Novikov, A. Baraban, H. Wong, G. Zhidomirov, M. Roger
{"title":"Numerical study of one-fold coordinated oxygen atom in silicon gate oxide","authors":"V. Gritsenko, A. Shaposhnikov, Yu. N. Novikov, A. Baraban, H. Wong, G. Zhidomirov, M. Roger","doi":"10.1109/HKEDM.2002.1029152","DOIUrl":null,"url":null,"abstract":"The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the /spl equiv/SiOH defect, which was proposed to be an electron or \"water trap\" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the /spl equiv/SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.
采用从头算密度泛函方法研究了氧化硅中具有未对电子/spl等效/SiO/spl中间点/和氢缺陷/spl等效/SiOH的非桥接氧空穴中心的捕获特性。发现/spl等效点/SiO/spl中间点/缺陷是一个电子陷阱，可作为湿氧化法制备金属-氧化物-半导体栅氧化物具有较好的抗辐射硬度的候选材料。另一方面，/spl当量/SiOH缺陷，它被认为是氧化物中的电子或“水陷阱”(A. Hartstein和D. R. Young, apple)。理论物理。列托人。， vol. 38, pp. 631, 1981)，根据目前的计算结果不可能是一个电子陷阱。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
