Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029169
H. Ho, K. Lo, G. Siu, C. Surya
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.
{"title":"Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off","authors":"H. Ho, K. Lo, G. Siu, C. Surya","doi":"10.1109/HKEDM.2002.1029169","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029169","url":null,"abstract":"Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122301191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029150
Pong Wing Tai, A. Wong
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.
{"title":"Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment","authors":"Pong Wing Tai, A. Wong","doi":"10.1109/HKEDM.2002.1029150","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029150","url":null,"abstract":"The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117110183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029163
V. Kasemsuwan
In this paper, a simple model for short channel MOSFET including velocity overshoot is proposed. The model is developed based on the velocity overshoot model obtained from the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting velocity model is the augmented drift-diffusion velocity model and all parameters involved are physical parameters. The model also includes the effects of the mobility degradation, channel length modulation, drain induced barrier lowering and parasitic drain source resistance. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.
{"title":"A simple model of short channel MOSFET including velocity overshoot","authors":"V. Kasemsuwan","doi":"10.1109/HKEDM.2002.1029163","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029163","url":null,"abstract":"In this paper, a simple model for short channel MOSFET including velocity overshoot is proposed. The model is developed based on the velocity overshoot model obtained from the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting velocity model is the augmented drift-diffusion velocity model and all parameters involved are physical parameters. The model also includes the effects of the mobility degradation, channel length modulation, drain induced barrier lowering and parasitic drain source resistance. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121386612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029162
C.L. Yang, J. Kuo
This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
{"title":"High-temperature quasi-saturation model of high-voltage DMOS power devices","authors":"C.L. Yang, J. Kuo","doi":"10.1109/HKEDM.2002.1029162","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029162","url":null,"abstract":"This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130439425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029156
H. Ho, W. Lam, P. Wong, F. Guo
In this paper, a differential phase imaging technique applied to optical surface plasmon resonance (SPR) sensors is presented. The technique makes use of the s-polarisation as the reference beam to interfere with the p-polarisation, of which the phase has a close relationship with the change of SPR conditions at the sensor surface. As a trial experiment, the SPR phase shift between water and air has been measured. Our results suggest a measurement accuracy of 5/spl times/10/sup -2/ rad.
{"title":"Application of differential phase measurement technique to surface plasmon resonance imaging sensors","authors":"H. Ho, W. Lam, P. Wong, F. Guo","doi":"10.1109/HKEDM.2002.1029156","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029156","url":null,"abstract":"In this paper, a differential phase imaging technique applied to optical surface plasmon resonance (SPR) sensors is presented. The technique makes use of the s-polarisation as the reference beam to interfere with the p-polarisation, of which the phase has a close relationship with the change of SPR conditions at the sensor surface. As a trial experiment, the SPR phase shift between water and air has been measured. Our results suggest a measurement accuracy of 5/spl times/10/sup -2/ rad.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116916780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029153
N. Zhan, K. L. Ng, M. Poon, C. Kok, M. Chan, H. Wong
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and the Si substrate was affected by the RTA time within the 500/spl deg/C to 600/spl deg/C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.
{"title":"Characteristics of high quality hafnium oxide gate dielectric","authors":"N. Zhan, K. L. Ng, M. Poon, C. Kok, M. Chan, H. Wong","doi":"10.1109/HKEDM.2002.1029153","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029153","url":null,"abstract":"Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and the Si substrate was affected by the RTA time within the 500/spl deg/C to 600/spl deg/C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029154
P. Chan, M. Poon, H. Wong, C. Kok
Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.
{"title":"Electrical characteristics of stressing for silicon oxynitride thin film","authors":"P. Chan, M. Poon, H. Wong, C. Kok","doi":"10.1109/HKEDM.2002.1029154","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029154","url":null,"abstract":"Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115867826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029152
V. Gritsenko, A. Shaposhnikov, Yu. N. Novikov, A. Baraban, H. Wong, G. Zhidomirov, M. Roger
The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the /spl equiv/SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.
采用从头算密度泛函方法研究了氧化硅中具有未对电子/spl等效/SiO/spl中间点/和氢缺陷/spl等效/SiOH的非桥接氧空穴中心的捕获特性。发现/spl等效点/SiO/spl中间点/缺陷是一个电子陷阱，可作为湿氧化法制备金属-氧化物-半导体栅氧化物具有较好的抗辐射硬度的候选材料。另一方面，/spl当量/SiOH缺陷，它被认为是氧化物中的电子或“水陷阱”(A. Hartstein和D. R. Young, apple)。理论物理。列托人。， vol. 38, pp. 631, 1981)，根据目前的计算结果不可能是一个电子陷阱。
{"title":"Numerical study of one-fold coordinated oxygen atom in silicon gate oxide","authors":"V. Gritsenko, A. Shaposhnikov, Yu. N. Novikov, A. Baraban, H. Wong, G. Zhidomirov, M. Roger","doi":"10.1109/HKEDM.2002.1029152","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029152","url":null,"abstract":"The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the /spl equiv/SiOH defect, which was proposed to be an electron or \"water trap\" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115278907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029160
H. Ho, C. L. Wong
A pressure sensor based on the spectral response associated with the surface plasmon resonance (SPR) occurring on a 50 nm gold surface is described. The operation of the device relies on the fact the refractive index of a gas changes with pressure. Since the conditions for SPR is extremely sensitive to refractive index variations, the pressure of the gas exposed to the sensor surface can be detected. In our spectral SPR sensor, such refractive index change leads to a shift in the spectral dip in the SPR curve. Experiments performed on nitrogen gas at room temperature has demonstrated that our trial setup has a sensitivity threshold of 8.33/spl times/10/sup -4/ RI units, which corresponds to a pressure change of 6.3 psi. We expect that further improvement may be possible if we use better spectral signal processing algorithm to locate the spectral dip with higher degree of accuracy.
{"title":"Application of spectral surface plasmon resonance for gas pressure sensing","authors":"H. Ho, C. L. Wong","doi":"10.1109/HKEDM.2002.1029160","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029160","url":null,"abstract":"A pressure sensor based on the spectral response associated with the surface plasmon resonance (SPR) occurring on a 50 nm gold surface is described. The operation of the device relies on the fact the refractive index of a gas changes with pressure. Since the conditions for SPR is extremely sensitive to refractive index variations, the pressure of the gas exposed to the sensor surface can be detected. In our spectral SPR sensor, such refractive index change leads to a shift in the spectral dip in the SPR curve. Experiments performed on nitrogen gas at room temperature has demonstrated that our trial setup has a sensitivity threshold of 8.33/spl times/10/sup -4/ RI units, which corresponds to a pressure change of 6.3 psi. We expect that further improvement may be possible if we use better spectral signal processing algorithm to locate the spectral dip with higher degree of accuracy.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126656112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029148
Bin Li, P. Lai, M. Huang, G.Q. Li
Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.
{"title":"Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor","authors":"Bin Li, P. Lai, M. Huang, G.Q. Li","doi":"10.1109/HKEDM.2002.1029148","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029148","url":null,"abstract":"Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"58 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121009868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：