Optimal extrinsic base fabrication for high performance SiGe HBTs for RF communication applications

Proceedings of CICC 97 - Custom Integrated Circuits Conference Pub Date : 1997-05-05 DOI:10.1109/CICC.1997.606661

R. Tang, J. Ford, B. Pryor, S. Anandakugan, P. Welch, K. Ginn, C. Burt, B. Yeung, J. Babcock

引用次数: 2

Abstract

SiGe HBTs with low 1/f noise, low base resistance (for low noise figure and high f/sub max/) and high intrinsic gain and breakdown voltage provide design leverage for RF communication applications. This work describes an optimal extrinsic base fabrication for SiGe HBTs, achieving f/sub max/ increased 2 times, R/sub B/ reduced 50%, noise figure at 900 MHz reduced about 0.5 dB, 1/f noise reduced 10 times, and current gain increased 2 times. Breakdown voltage V/sub CEO/ is larger than 8.0 V, sufficient for 3 V operations. Those results have been achieved at no additional mask or process steps to the conventional base-line process.

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用于射频通信应用的高性能SiGe hbt的最佳外部基基制造

SiGe hbt具有低1/f噪声，低基极电阻(低噪声系数和高f/sub max/)以及高固有增益和击穿电压，为RF通信应用提供了设计优势。这项工作描述了SiGe HBTs的最佳外部基基制造，实现了f/sub max/提高2倍，R/sub B/降低50%，900 MHz噪声系数降低约0.5 dB, 1/f噪声降低10倍，电流增益提高2倍。击穿电压V/sub /大于8.0 V，足以满足3v的工作。这些结果是在没有额外的掩膜或常规基线工艺步骤的情况下实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of CICC 97 - Custom Integrated Circuits Conference

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