Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
{"title":"Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature","authors":"Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598382","DOIUrl":null,"url":null,"abstract":"In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.
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