Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598382
Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.
{"title":"Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature","authors":"Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598382","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598382","url":null,"abstract":"In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115303474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598449
T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto
We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y2O3 and ZrO2 films. Results showed that bonded interface disappeared perfectly (Y2O3 films) or partially (ZrO2 film) at room temperature, implying high bonding potential using these oxide films in ADB.
{"title":"Atomic Diffusion Bonding using Y2O3 and ZrO2 films","authors":"T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto","doi":"10.1109/LTB-3D53950.2021.9598449","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598449","url":null,"abstract":"We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y<inf>2</inf>O<inf>3</inf> and ZrO<inf>2</inf> films. Results showed that bonded interface disappeared perfectly (Y<inf>2</inf>O<inf>3</inf> films) or partially (ZrO<inf>2</inf> film) at room temperature, implying high bonding potential using these oxide films in ADB.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126732224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/ltb-3d53950.2021.9598387
{"title":"LTB-3D 2021 Conference Committee","authors":"","doi":"10.1109/ltb-3d53950.2021.9598387","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598387","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114387034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598384
Hung-Che Liu, A. Gusak, K. Tu, Chih Chen
Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.
{"title":"Void ripening in Cu-Cu bonds","authors":"Hung-Che Liu, A. Gusak, K. Tu, Chih Chen","doi":"10.1109/LTB-3D53950.2021.9598384","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598384","url":null,"abstract":"Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130646553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598401
Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, E. Shikoh, K. Maezawa, N. Shigekawa
Coplanar waveguides are fabricated by directly bonding 17-μm Al foils to Si substrates with different resistivities. A lower insertion loss is observed for a Si substrate with higher resistivity since the substrate loss is decreased. Calculation using an analytical model shows that the insertion loss increases by reducing the thickness of conductors, which demonstrates the superiority of direct bonding of metal foils for realizing low-loss passive components to be integrated on semiconductor substrates.
{"title":"Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates","authors":"Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, E. Shikoh, K. Maezawa, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598401","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598401","url":null,"abstract":"Coplanar waveguides are fabricated by directly bonding 17-μm Al foils to Si substrates with different resistivities. A lower insertion loss is observed for a Si substrate with higher resistivity since the substrate loss is decreased. Calculation using an analytical model shows that the insertion loss increases by reducing the thickness of conductors, which demonstrates the superiority of direct bonding of metal foils for realizing low-loss passive components to be integrated on semiconductor substrates.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114623142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598442
Y. Fujita, S. Ishihara, Kosuke Nishigaya, Yuki Nakashima, K. Tanabe
Fluid self-assembly is one of the promising methods for bonding and integrating micron-order optoelectronic devices on semiconductor chips. In this study, we investigated the fluid self-assembly process using an unprecedented Si thin film and quantitatively evaluated the selectivity in integration by introducing a thermal oxide film. In the thin film separation process, good separation performance from the substrate was achieved by performing SiO2 layer etching while applying ultrasonic vibration, and the selectivity in integration could be improved by introducing a thermal oxide film to the receiver substrate.
{"title":"Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly","authors":"Y. Fujita, S. Ishihara, Kosuke Nishigaya, Yuki Nakashima, K. Tanabe","doi":"10.1109/LTB-3D53950.2021.9598442","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598442","url":null,"abstract":"Fluid self-assembly is one of the promising methods for bonding and integrating micron-order optoelectronic devices on semiconductor chips. In this study, we investigated the fluid self-assembly process using an unprecedented Si thin film and quantitatively evaluated the selectivity in integration by introducing a thermal oxide film. In the thin film separation process, good separation performance from the substrate was achieved by performing SiO2 layer etching while applying ultrasonic vibration, and the selectivity in integration could be improved by introducing a thermal oxide film to the receiver substrate.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127786201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598448
G. Yonezawa, M. Uomoto, T. Shimatsu
Atomic diffusion bonding of wafers with oxide underlayers using Hf films produces an interface with 100% light transmittance and large surface free energy at the bonded interface greater than 2 J/m2, which is useful for optical applications with high photon energy.
{"title":"Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications","authors":"G. Yonezawa, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598448","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598448","url":null,"abstract":"Atomic diffusion bonding of wafers with oxide underlayers using Hf films produces an interface with 100% light transmittance and large surface free energy at the bonded interface greater than 2 J/m2, which is useful for optical applications with high photon energy.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126233395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/ltb-3d53950.2021.9598422
{"title":"[Copyright notice]","authors":"","doi":"10.1109/ltb-3d53950.2021.9598422","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598422","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134052201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598394
K. Makita, Y. Kamikawa, H. Mizuno, R. Oshima, Y. Shoji, S. Ishizuka, T. Sugaya
We report a unique bonding technology using Pd nanoparticle array and adhesive material for multijunction (MJ) solar cells. The technology, which is modified with our previous “smart stack technology”, expands the possibility of MJ solar cell. In GaAs//CuInGaSe 3-junction solar cell, a record-efficiency of 28.06% was attained.
{"title":"Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material","authors":"K. Makita, Y. Kamikawa, H. Mizuno, R. Oshima, Y. Shoji, S. Ishizuka, T. Sugaya","doi":"10.1109/LTB-3D53950.2021.9598394","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598394","url":null,"abstract":"We report a unique bonding technology using Pd nanoparticle array and adhesive material for multijunction (MJ) solar cells. The technology, which is modified with our previous “smart stack technology”, expands the possibility of MJ solar cell. In GaAs//CuInGaSe 3-junction solar cell, a record-efficiency of 28.06% was attained.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133455811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598383
A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang
Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).
{"title":"Fabrication and Characterization of GaN/Diamond bonding interface","authors":"A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang","doi":"10.1109/LTB-3D53950.2021.9598383","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598383","url":null,"abstract":"Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134505980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：