{"title":"Investigation of RF Performance of Nano-Scale Ultra-Thin-Body Schottky-Barrier MOSFETs Using Monte Carlo Simulation","authors":"Z. Xia, G. Du, Xiaoyan Liu, Jinfeng Kang, R. Han","doi":"10.1109/EDSSC.2005.1635268","DOIUrl":null,"url":null,"abstract":"A Monte Carlo investigation of the dynamic performance of nano-scale ultra-thin-body (UTB) Schottky-Barrier MOSFETs (SB-MOSFETs) is presented. A thorough account of how the gate voltage and SB barrier height affect the RF performance of UTB SB-MOSFETs is elaborated. The UTB SB-MOSFET offers excellent RF performance with high values of fTand fmax. The peak fTis higher than 600 GHz with SB height ranging from 0.2eV to 0.3eV. It is found that gate voltage has a significant influence on fTand fmaxof UTB SB-MOSFETs whereas the barrier height is of minor importance. However, both gate voltage and SB height affect the gmand gdsobviously. For high performance of UTB SB-MOSFETs, appropriate gate voltage and SB height is of great importance.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A Monte Carlo investigation of the dynamic performance of nano-scale ultra-thin-body (UTB) Schottky-Barrier MOSFETs (SB-MOSFETs) is presented. A thorough account of how the gate voltage and SB barrier height affect the RF performance of UTB SB-MOSFETs is elaborated. The UTB SB-MOSFET offers excellent RF performance with high values of fTand fmax. The peak fTis higher than 600 GHz with SB height ranging from 0.2eV to 0.3eV. It is found that gate voltage has a significant influence on fTand fmaxof UTB SB-MOSFETs whereas the barrier height is of minor importance. However, both gate voltage and SB height affect the gmand gdsobviously. For high performance of UTB SB-MOSFETs, appropriate gate voltage and SB height is of great importance.
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