Bilayer Graphene Field Effect Transistor Modelling with Improved Mobility Analysis

Abstract

Silicon has been the major driving force behind the technological advancement of humanity for the past 50 years. Silicon is used for manufacturing transistors, memory, Printed Circuit Broads, etc. Gordon Moore predicted that “the number of transistors on a silicon chip would double approximately every eighteen months”. The semiconductor industry had taken this prediction as the primary driving force behind the innovation of faster and efficient electronics manufacturing. This is achieved by miniaturizing devices, also know as scaling. Silicon is limited by performance degradation due to effects such as band to band tunneling, scattering phenomenon, etc, so the search to replace silicon in semiconductors has started. Many different methods to increase performance and efficiency were introduced before jumping wagon to beyond silicon materials such as designing 3-D transistors, FINFETs, replacing Silicon Dioxide with high-k dielectrics, etc. These proved to be increasing the manufacturing costs. The prime candidates for replacing Silicon are Carbon based materials, owing to their extraordinary electronic, thermal, optical and mechanical properties. The most researched are Carbon Nano Tubes and Graphene. The work focuses on modelling a Bilayer Graphene Field Effect Transistor with different mobility of holes and electrons taken into consideration.