A. Clei, S. Sainson, M. Feuillade, K. Sauv, R. Azoulay, J. Dumas, M. Chertouk, O. Calliger, R. Lefevre
{"title":"GaAs on InP MESFETs and circuits for OEICs","authors":"A. Clei, S. Sainson, M. Feuillade, K. Sauv, R. Azoulay, J. Dumas, M. Chertouk, O. Calliger, R. Lefevre","doi":"10.1109/GAAS.1993.394469","DOIUrl":null,"url":null,"abstract":"High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<>
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