Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range
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引用次数: 10
Abstract
The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.
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