R. Chu, D. Brown, D. Zehnder, Xu Chen, A. Williams, R. Li, M. Chen, S. Newell, K. Boutros
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引用次数: 14
Abstract
We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.
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