{"title":"Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier","authors":"V. D. Moskalenko, A. Badin, D. A. Pidotova","doi":"10.1109/EDM49804.2020.9153468","DOIUrl":null,"url":null,"abstract":"In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM49804.2020.9153468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.
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