Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153471
O. Bodin, M. Kramm, R. Rakhmatullov, F. Rakhmatullov, M. Safronov, A. Bodin
In this study, a portable cardioanalyzer is considered for assessment of heart conditions without limiting patient movement including an ECG recorder with external electrodes, wireless transmitter for work in networks of the third and fourth generation and a computing module. Distinctive features based on methods of protected patents of non-invasive cardiodiagnosis by portable cardioanalyzer suggested are the following: calculating of equivalent electric generator of the patient’s heart (EEGH); determination of patient’s critical condition in real-time and automatic call of ambulance in critical condition of patient’s heart.
{"title":"Portable Cardioanalyzer with Registration of Multiply Leads of Electrocardiac Signals","authors":"O. Bodin, M. Kramm, R. Rakhmatullov, F. Rakhmatullov, M. Safronov, A. Bodin","doi":"10.1109/EDM49804.2020.9153471","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153471","url":null,"abstract":"In this study, a portable cardioanalyzer is considered for assessment of heart conditions without limiting patient movement including an ECG recorder with external electrodes, wireless transmitter for work in networks of the third and fourth generation and a computing module. Distinctive features based on methods of protected patents of non-invasive cardiodiagnosis by portable cardioanalyzer suggested are the following: calculating of equivalent electric generator of the patient’s heart (EEGH); determination of patient’s critical condition in real-time and automatic call of ambulance in critical condition of patient’s heart.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116687389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153344
P. Gembukh, V. F. Fedorov, D. Shiyanov, M. Trigub
The paper presents the results of development laboratory model for evaluation of efficiency of metal vapor active media excitation. Low current excitation mode is investigated. Low current mode is found to differ from the typical mode of excitation by amplitude of pump current, which is units of amperes in this mode. The radiation in low current mode was detected. Efficiency was grown in 2.5 times in difference with the typical mode of excitation.
{"title":"Laboratory Model for Low Current Excitation of Metal Vapor Active Media Lasers","authors":"P. Gembukh, V. F. Fedorov, D. Shiyanov, M. Trigub","doi":"10.1109/EDM49804.2020.9153344","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153344","url":null,"abstract":"The paper presents the results of development laboratory model for evaluation of efficiency of metal vapor active media excitation. Low current excitation mode is investigated. Low current mode is found to differ from the typical mode of excitation by amplitude of pump current, which is units of amperes in this mode. The radiation in low current mode was detected. Efficiency was grown in 2.5 times in difference with the typical mode of excitation.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"470 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153476
E. Mirgorodskaya, N. Mityashin, Yuri B. Tomashevskiyl, Y. M. Golembiovsky, A. Miroshnichenko, D. Lukov
The paper describes a three-phase multi-level frequency converter based on two-channel impulse converters, the structure of the power circuit of which does not depend on the number of levels of the output curve. The principle of forming of a multi-level curve is considered, it allows obtaining optimal efficiency of the stabilization process of the output voltage when the magnitudes of the load voltage and the supply grid voltage change. Results of computer simulation are presented; they confirm the declared advantages of the converter.
{"title":"Multi-level Voltage Inverter with Structure Invariant to the Number of Levels of the Output Curve","authors":"E. Mirgorodskaya, N. Mityashin, Yuri B. Tomashevskiyl, Y. M. Golembiovsky, A. Miroshnichenko, D. Lukov","doi":"10.1109/EDM49804.2020.9153476","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153476","url":null,"abstract":"The paper describes a three-phase multi-level frequency converter based on two-channel impulse converters, the structure of the power circuit of which does not depend on the number of levels of the output curve. The principle of forming of a multi-level curve is considered, it allows obtaining optimal efficiency of the stabilization process of the output voltage when the magnitudes of the load voltage and the supply grid voltage change. Results of computer simulation are presented; they confirm the declared advantages of the converter.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122820738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153482
I. Musorov, D. Ogorodnikov, D. Shiyanov, V. B. Sukhanov, S. Torgaev, G. Evtushenko
The results of the operation of a capacitive pumped CuBr laser in a reduced energy deposition mode are presented. A high radiation-pulse repetition rate of 100 kHz in the active medium of copper bromide vapors was obtained. The results of OrCAD simulation of the high-frequency metal vapor active media pumping source with capacitive pumping are presented.
{"title":"Operation of a Capacitive Pumped CuBr Laser in a Reduced Energy Deposition Mode","authors":"I. Musorov, D. Ogorodnikov, D. Shiyanov, V. B. Sukhanov, S. Torgaev, G. Evtushenko","doi":"10.1109/EDM49804.2020.9153482","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153482","url":null,"abstract":"The results of the operation of a capacitive pumped CuBr laser in a reduced energy deposition mode are presented. A high radiation-pulse repetition rate of 100 kHz in the active medium of copper bromide vapors was obtained. The results of OrCAD simulation of the high-frequency metal vapor active media pumping source with capacitive pumping are presented.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124163360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153505
E. Baranov, V. Popov, N. A. Sevostyanov
This paper investigates a control technique applicable for Current-Source Matrix Converter. Proposed switching strategy realizes algorithm of “relay” regulation of supplying current. Since both input/output currents are regulated the converter provides high power factor and sinusoidal output voltage with controllable magnitude and frequency. In the paper, a general description of proposed control pattern is given. The investigation considers both Indirect and conventional Direct Matrix Converter structures. The simulation is performed and data obtained are introduced with plotted graphs and signal waveforms approving functionality of the circuits. The results are discussed and summarized in last sections.
{"title":"A Control Technique for Current Source Matrix Converter","authors":"E. Baranov, V. Popov, N. A. Sevostyanov","doi":"10.1109/EDM49804.2020.9153505","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153505","url":null,"abstract":"This paper investigates a control technique applicable for Current-Source Matrix Converter. Proposed switching strategy realizes algorithm of “relay” regulation of supplying current. Since both input/output currents are regulated the converter provides high power factor and sinusoidal output voltage with controllable magnitude and frequency. In the paper, a general description of proposed control pattern is given. The investigation considers both Indirect and conventional Direct Matrix Converter structures. The simulation is performed and data obtained are introduced with plotted graphs and signal waveforms approving functionality of the circuits. The results are discussed and summarized in last sections.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134036112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153486
E. Chernikova, A. Belousov
The paper considers the protection of radio-electronic equipment by means of devices operating on modal filtration technology. The possibility of modal decomposition of an ultrashort pulse in the reflection symmetric meander line (ML) is analyzed for the first time. It consists of two individual turns, in which the conductors are connected pairwise at one end. The work presents the results of quasistatic simulation of the time response of three schematic diagrams of an ML with the length of l m. The results showed the improvement of characteristics in comparison to the reflection symmetric modal filter, namely an increased value of the time intervals between decomposition pulses in the absence of resistors at one end of the line.
{"title":"Reflection Symmetric Meander Line Protecting against Ultrashort Pulses","authors":"E. Chernikova, A. Belousov","doi":"10.1109/EDM49804.2020.9153486","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153486","url":null,"abstract":"The paper considers the protection of radio-electronic equipment by means of devices operating on modal filtration technology. The possibility of modal decomposition of an ultrashort pulse in the reflection symmetric meander line (ML) is analyzed for the first time. It consists of two individual turns, in which the conductors are connected pairwise at one end. The work presents the results of quasistatic simulation of the time response of three schematic diagrams of an ML with the length of l m. The results showed the improvement of characteristics in comparison to the reflection symmetric modal filter, namely an increased value of the time intervals between decomposition pulses in the absence of resistors at one end of the line.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131063638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153468
V. D. Moskalenko, A. Badin, D. A. Pidotova
In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.
{"title":"Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier","authors":"V. D. Moskalenko, A. Badin, D. A. Pidotova","doi":"10.1109/EDM49804.2020.9153468","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153468","url":null,"abstract":"In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115406794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153473
V. Osipov, V. Lisenkov, V. Platonov, E. V. Tikhonov
The paper reports on a number of new physical phenomena found in the study of the laser radiation impact on porous materials. This applies to formation of laser plume at intensities significantly below the damage threshold of single crystal material which leads to the formation of needle-like structure with a diameter of ~1mm and a height of 8 mm on the target surface. The plume formation is characterized by irregular glow and spallation of the front surface of the target. In our opinion, these phenomena are caused by the transition from vapor to vapor-drop ablation, which leads to 6–8 times increase of the laser crater depth at the same energy of the laser pulse. At the same time, the vapor-drop mode of ablation is typical mainly for transparent materials, and the vapor mode is typical for materials that are opaque for laser radiation. Mathematical models explaining the reasons for the above processes and facts are presented.
{"title":"Interaction of Laser Radiation with Transparent Material Porous Targets","authors":"V. Osipov, V. Lisenkov, V. Platonov, E. V. Tikhonov","doi":"10.1109/EDM49804.2020.9153473","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153473","url":null,"abstract":"The paper reports on a number of new physical phenomena found in the study of the laser radiation impact on porous materials. This applies to formation of laser plume at intensities significantly below the damage threshold of single crystal material which leads to the formation of needle-like structure with a diameter of ~1mm and a height of 8 mm on the target surface. The plume formation is characterized by irregular glow and spallation of the front surface of the target. In our opinion, these phenomena are caused by the transition from vapor to vapor-drop ablation, which leads to 6–8 times increase of the laser crater depth at the same energy of the laser pulse. At the same time, the vapor-drop mode of ablation is typical mainly for transparent materials, and the vapor mode is typical for materials that are opaque for laser radiation. Mathematical models explaining the reasons for the above processes and facts are presented.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114604691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153491
I. Krasniy, S. Akimov, A. Berkin
In order to produce transient voltage suppressors (TVS), the impurity doping processes (for B, Al) have been developed with the aim of creating two types of structures: diffused structures that have a junction depth of up to 100 $mu mathrm{m}$ and a breakdown voltage within the range of 20…800 V; low-capacitance diffused structures that have a specific capacitance of p-n junction which does not exceed 80 pF/cm2. The paper presents the experimental dependencies of diffusion layer parameters on the conditions of the doping process. The dependencies of electrical parameters of the p-n junctions (such as breakdown voltage and capacitance) on both the conditions of the doping process and the substrate material used are presented in the paper, as well.
{"title":"The Development of Deep Diffusion Modes Involved in Production of Semiconductor Structures for the TVS with a Breakdown Voltage of 800 V","authors":"I. Krasniy, S. Akimov, A. Berkin","doi":"10.1109/EDM49804.2020.9153491","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153491","url":null,"abstract":"In order to produce transient voltage suppressors (TVS), the impurity doping processes (for B, Al) have been developed with the aim of creating two types of structures: diffused structures that have a junction depth of up to 100 $mu mathrm{m}$ and a breakdown voltage within the range of 20…800 V; low-capacitance diffused structures that have a specific capacitance of p-n junction which does not exceed 80 pF/cm2. The paper presents the experimental dependencies of diffusion layer parameters on the conditions of the doping process. The dependencies of electrical parameters of the p-n junctions (such as breakdown voltage and capacitance) on both the conditions of the doping process and the substrate material used are presented in the paper, as well.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117040646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1109/EDM49804.2020.9153525
Nurlan Bayanbay, K. Ozhikenov, Yerkebulan Tuleshov, O. Bezborodova, O. Bodin, A. Spirkin
The approach to increase the efficiency of emergency medical aid during an emergency situation based on the use of an unmanned aircraft equipped with a medical manipulator and special equipment is reviewed in this article. The approach proposed reduces the time frame for the provision of medical care and significantly increases the possibility of providing medical care during the golden hour.
{"title":"Peculiarities of Equipping an Unmanned Medical Aerial Vehicles During Search and Rescue Operations","authors":"Nurlan Bayanbay, K. Ozhikenov, Yerkebulan Tuleshov, O. Bezborodova, O. Bodin, A. Spirkin","doi":"10.1109/EDM49804.2020.9153525","DOIUrl":"https://doi.org/10.1109/EDM49804.2020.9153525","url":null,"abstract":"The approach to increase the efficiency of emergency medical aid during an emergency situation based on the use of an unmanned aircraft equipped with a medical manipulator and special equipment is reviewed in this article. The approach proposed reduces the time frame for the provision of medical care and significantly increases the possibility of providing medical care during the golden hour.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122013942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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