{"title":"A narrowband low noise amplifier for passive imaging systems","authors":"G. Mehdi, Hu Anyong, Miao Jun-gang","doi":"10.1109/IBCAST.2013.6512200","DOIUrl":null,"url":null,"abstract":"The design of a narrowband low noise amplifier (LNA) module at Ka band is presented. A low noise MMIC chip fabricated in GaAs pHEMT process is employed. Since the LNA is narrowband, its matching is sensitive to parasitic associated with the bond-wire interconnects and the fixture connectors. A T-type matching network which comprises of a high-low impedance lines is realized on microstrip substrate to nullify the bond-wires inductance. The planar structures in the design are simulated in ADS Momentum® while the bond-wires are modeled in a FEM based full-wave simulator. The design, assembly and packaging of the module are described. The measured results exhibit 23.5 dB gain at 35 GHz frequency. The 1:2 VSWR bandwidth is 2 GHz. The measured noise figure is 3.5 dB.","PeriodicalId":276834,"journal":{"name":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBCAST.2013.6512200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The design of a narrowband low noise amplifier (LNA) module at Ka band is presented. A low noise MMIC chip fabricated in GaAs pHEMT process is employed. Since the LNA is narrowband, its matching is sensitive to parasitic associated with the bond-wire interconnects and the fixture connectors. A T-type matching network which comprises of a high-low impedance lines is realized on microstrip substrate to nullify the bond-wires inductance. The planar structures in the design are simulated in ADS Momentum® while the bond-wires are modeled in a FEM based full-wave simulator. The design, assembly and packaging of the module are described. The measured results exhibit 23.5 dB gain at 35 GHz frequency. The 1:2 VSWR bandwidth is 2 GHz. The measured noise figure is 3.5 dB.
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