Photosensitive benzocyclobutene for stress-buffer and passivation applications (one mask manufacturing process)

A. Strandjord, W. B. Rogers, Y. Ida, R.R. DeVeillis, S. Shiau, E. Moyer, D. Scheck, P.E. Garron
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引用次数: 13

Abstract

Photosensitive benzocyclobutene (Photo-BCB) has been widely reported on for use as a dielectric material in multilayer packaging applications, including: MCMs, IO redistribution, and flat panel display. Photo-BCB has many properties which are highly attractive for these applications, including: a simple processing scheme which is compatible with existing IC manufacturing techniques, low level of ionics, low moisture uptake, low cure temperatures, rapid thermal curing, high optical transparency, high planarization level, high thermal stability, high solvent resistance, very low outgassing, and a low dielectric constant. Photo-BCB is also being actively evaluated for wafer-level applications such as stress-buffer and passivation. In this paper, we discuss the Photo-BCB properties and processing steps as they relate to these two applications. We also compare the manufacturing scheme based on a one mask process for memory die, to the steps in a two mask process for stress-buffer and passivation.
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用于应力缓冲和钝化应用的光敏苯并环丁烯(一种掩模制造工艺)
光敏苯并环丁烯(photobcb)已被广泛报道用于多层封装应用,包括:mcm, IO再分配和平板显示。光- bcb具有许多对这些应用非常有吸引力的特性,包括:与现有IC制造技术兼容的简单加工方案,低离子水平,低吸湿率,低固化温度,快速热固化,高光学透明度,高平面化水平,高热稳定性,高耐溶剂性,非常低的脱气和低介电常数。Photo-BCB也被积极评估用于晶圆级应用,如应力缓冲和钝化。在本文中,我们讨论了与这两种应用相关的Photo-BCB特性和处理步骤。我们还比较了基于单掩模工艺的存储芯片制造方案与基于应力缓冲和钝化的双掩模工艺的步骤。
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