Design of CMOS integrated circuits for radiation hardening and its application to space electronics

Y. Deval, H. Lapuyade, F. Rivet
{"title":"Design of CMOS integrated circuits for radiation hardening and its application to space electronics","authors":"Y. Deval, H. Lapuyade, F. Rivet","doi":"10.1109/ASICON47005.2019.8983531","DOIUrl":null,"url":null,"abstract":"This paper addresses some design tricks that allow canceling - or at least reducing - the sensitivity of silicon integrated circuits to radiation effects. Both analog and digital circuits are here addressed. Redundancy, specific topology, system-level compensation: any combination is helpful as long as it avoids the implementation of radiation hardened specific technologies, as these are both expensive and unsuited to most of the state-of-the-art building blocks.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper addresses some design tricks that allow canceling - or at least reducing - the sensitivity of silicon integrated circuits to radiation effects. Both analog and digital circuits are here addressed. Redundancy, specific topology, system-level compensation: any combination is helpful as long as it avoids the implementation of radiation hardened specific technologies, as these are both expensive and unsuited to most of the state-of-the-art building blocks.
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辐射硬化CMOS集成电路设计及其在空间电子中的应用
本文讨论了一些设计技巧,可以消除或至少降低硅集成电路对辐射效应的灵敏度。模拟电路和数字电路都在这里讨论。冗余、特定拓扑、系统级补偿:任何组合都是有益的,只要它避免实现防辐射的特定技术,因为这些既昂贵又不适合大多数最先进的构建模块。
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